Philips to build up Mosfets Roy Rubenstein Philips Semiconductors has extended its trench-based power MOSFET technology to address the 100 to 200V range. "The SiliconMax devices provide significant performance benefits in terms of reduced on-resistance and gate charge," said Jan-Willem Reynaerts, marketing manager for power semiconductors at Philips. The reduced on-resistance (RDSon) of the SiliconMAX devices enable them to
be used in applications previously dominated by DMOS power MOSFETs. Reynaerts cites one customer design where a single SiliconMAX device replaced two DMOS parts. Designers can use the same sized package as a DMOS device and benefit from the lower RDSon or, alternatively, a smaller package can be used for a given RDSon value. SiliconMAX devices also have a reduced gate charge, a consequence of the buried gate structure of trench-based devices having a lower gate capacitance. The faster
switching speeds that result make the SiliconMax devices ideal for use in switchmode power supplies and DC/DC converters.