Samsung Electronics is sampling a 16Gbit NAND flash memory for use in hard disk drive replacement. It is the firm's first NAND flash device fabbed on its 50nm semiconductor process technology.
The first samples of this high density NAND flash memory have a multi-level cell (MLC) design with a 4kbyte page size, which the firm said will enhance both its read and write features.
"The new 4kbyte page function improves the conventional 2kbyte paging system for MLC NAND flash to double the read speed, while increasing write performance 150%," said Samsung.
According to the South Korean firm, this will support faster data transfer speeds in mobiles and cameras when storing or reading large data files whether they are using an external memory card, or a handset with a built-in flash.
Early market introduction of 16Gbit and higher density NAND flash memories is expected to accelerate the adoption of non-volatile memory applications such as flash-based solid state disks.
Samsung plans to begin mass producing its 16Gb NAND flash memory in the first quarter of 2007.1