Samsung Electronics said it has qualified 28nm low-power (LP) process with High-k Metal Gate (HKMG) technology and is ready for risk production.
Samsung Foundry has also added a variant to its advanced process technology roadmap, 28nm LPH HKMG process technology.
According to Samsung, the 28nm LP process technology can offer 35% active/standby power reduction at the same frequency or 30% performance boost at the same leakage over 45nm LP SoC designs.
The 28nm LPH process has been developed for mobile device applications that can deliver over 2GHz processing performance.
“28nm LPH offers 60% of active power reduction at the same frequency or 55% of performance boost at the same leakage over 45nm LP SoC designs,” said Samsung.
28nm LPH process shuttles are available.
Samsung full process design kits (PDKs) and design flows from Synopsys, Cadence, Mentor, and Magma.
Samsung also has a licensed portfolio of standard cells, memories, and interface IPs from leading companies including ARM and Synopsys.
Samsung Foundry is currently accepting designs for its 28nm technologies.
Multiple customer designs have been silicon-validated, and many more products and IP test chips are being processed at Samsung's logic fab, the S Line, in Giheung, South Korea.