Nanosys, the LED materials specialist, has joined Sematech, the US R&D consortium, to develop non-volatile memory technology.
“Sematech provides Nanosys with an excellent development platform for our next generation Quantum Dot Memory (QDMTM) technology,” says Jason Hartlove, CEO of Nanosys, “this collaboration will further the commercialisation of our advanced materials and yield solutions that are critical to the continued progress of the memory roadmap.”
The intention is to extend non-volatile memory to the 20xnm process node – something which is problematic with the thinness of the oxides in traditional floating gate non-volatile memory.
. “Nanosys’ unique expertise in process-ready, advanced material technology will complement our own device and process expertise.,” says Raj Jammy, Sematech’s v-p of emerging technologies, “we will work together to develop practical and promising approaches to address the continued scaling needs of the fast-growing non-volatile memory market.”
The goal of Sematech’s FEP program is to provide novel leading-edge materials, processes, structural modules and electrical and physical characterization solutions to support the continued scaling of logic and memory applications.
Non volatile memory alternatives to floating gate flash like MRAM, phase change RAM and trapped charge memory have all displayed limitations at reaching the 64Gbit densities currently being achieved for floating gate.