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For more on memory, NAND, DRAM, SRAM and DDR content, see Components/Memory

Samsung fabs 18Gibt NAND flash on 40nm

Richard Wilson
Tuesday 10 March 2009 10:28

Samsung Electronics is using 40nm process technology to produce an 18Gbit Flex-OneNAND- fusion memory chip.

Flex-OneNAND is a proprietary memory device integrates both single and multi-level NAND in the one flash memory chip. 

Importantly, the technology allows designers to choose the portion of SLC and MLC NAND storage to be used in the embedded memory design through a software adjustment.

This can be used to optimise access speed and memory density. SLC is faster and more power efficient than higher density MLC NAND flash technology.

“Flex-OneNAND's MLC area provides up to a three times greater read speed and its SLC area offers up to a four times greater read speed than regular MLC NAND,” claimed Samsung. 

“With the 40nm Flex-OneNAND we are proud to provide an exclusive cost-efficient approach to memory selection,” said Gerd Schauss, Director of Memory Marketing, Samsung Semiconductor Europe

Samsung has included software to support a system level interface for embedded memory, moviNAND (or eMMC) in its 8Gbit Flex-OneNAND.

Applications are expected to be in high end mobiles, smartphones and well as HDTVs, and IPTVs.

 

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