RF Micro Devices has announced a fully qualified gallium nitride (GaN) unmatched transistor optimised for 48V and 30W commercial and defence applications.
The RF3931 is RFMD's first GaN product to achieve full product qualification, a process through which RF products are released by RFMD for mass production.
Shipments have started to high power amplifier manufacturers.
According to Bob Bruggeworth, president and CEO of RFMD, GaN technology can deliver performance that is beyond that of current competing technologies.
"RFMD's GaN technology is manufactured in the same high-volume manufacturing facility as our industry-leading GaAs products, providing RFMD a measurable competitive advantage. Accordingly, we believe our GaN technology will become a disruptive technology across a broad range of commercial and defense markets," said Bruggeworth.
The 30W RF3931 is part of a family of five RFMD GaN unmatched power transistors to be released for mass production over the next two quarters. Ranging from 10 to 120W, these wide bandwidth, unmatched power transistors enable the development of high-efficiency HPAs for a broad range of applications, including cellular and WiMAX infrastructure.
See: UK wafer firm helps push GaN into the mainstream