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For more on memory, NAND, DRAM, SRAM and DDR content, see Components/Memory

Nanotube firm demonstrates 22nm memory

Richard Wilson
Wednesday 12 April 2006 16:24

Nantero says that it has fabricated and tested a 22nm NRAM memory switch based on its proprietary carbon nanotube fabric.

NRAM is a rewritable memory device that holds its data content without power, making it sometimes referred to as the next potential universal memory technology.

“These results demonstrate that NRAM can be the standalone and embedded memory of choice. NRAM combines the non-volatility of flash with the speed of SRAM and the density of DRAM,” said Greg Schmergel, Nantero’s co-founder and CEO.

Working devices have been tested by writing and reading data using 3ns cycle times, which gives the technology the potential to match the today’s high speed SRAM.

The US firm is claiming that the technology is scalable to different process technology nodes over several decades.

“We have also proven that NRAM can be scaled for many future generations and we believe the scaling will continue down to below the 5nm technology node,” said Schmergel.

Nantero said it has over 80 patent applications pending covering multiple aspects of carbon nanotube use in electronics, of which over a dozen, it said, have been granted.

 

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