Toshiba and SanDisk have announced the start of volume production at Fab 5, the third 300mm wafer NAND fabrication facility at Toshiba’s Yokkaichi Operations in Mie Prefecture, Japan.
Toshiba began the construction of Fab 5 in July 2010, building work was finished in March 2011, and the new facility, equipped with manufacturing equipment funded by Toshiba and SanDisk, started volume production in July 2011.
Fab 5 currently uses 24nm process technology and its first wafer outs will be in August. In time, the fab will transition to more advanced process generations, starting with recently announced 19nm technology.
Fab 5 incorporates advanced earthquake-absorbing structures and integrates multiple power compensation techniques for protection against unexpected disruptions.
LED lighting and power-saving manufacturing equipment will support the fab in securing Toshiba’s goal of 12% less CO2 emissions than Fab 4. A wafer transportation system links the facility with Fabs 3 and 4 to support efficient manufacturing.
Flash Forward, Ltd., a joint venture between Toshiba and SanDisk established in September 2010 (50.1% owned by Toshiba and 49.9% by SanDisk), funded the advanced manufacturing equipment within the fab.