Renesas Electronics has developed its first 40nm memory intellectual property (IP) for automotive real-time applications.
It will launch next year, 40nm embedded flash microcontrollers (MCUs) for automotive applications using this 40nm flash technology, with samples available by the beginning of autumn 2012.
The memory IP is the firm's flash MONOS (metal oxide nitride oxide silicon) technology.
According to the company, evaluation results available from 40nm flash test devices show excellent characteristics for three critical parameters - data retention, program/erase cycle endurance and programming time.
The flash memory IP has 20 years of data retention, and the code flash supports read speed of 120MHz.
The data flash achieves data-retention period of 20 years even after 125,000 of program/erase cycles, says the supplier.
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