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For more on memory, NAND, DRAM, SRAM and DDR content, see Components/Memory

Intel to adapt NOR for data storage

Wednesday 16 June 2004 09:52

Intel, the second largest NOR flash supplier, is trying to re-engineer its technology to make it suitable for data storage so it can compete in the fastest growing part of the flash market currently addressed by NAND flash.

"We are going to compete in data, and there is no reason it can't be served by NOR," Peter Van Deventer, director of flash products group at Intel, told Electronics Weekly, adding, "we believe we can do some very creative things in NOR so we can compete."

The creativity will lie in adapting its NOR cell to make it comparable in size and write speed to NAND.

"If a NAND cell measures 4f2 (where f is the feature size) then a NOR cell measures 10f2," according to Helmut Schock, European memory boss at NAND pioneer and market leader Toshiba. "NAND flash is three times cheaper to make than floating gate NOR technology," he said.

The other problem Intel will have to solve is the much slower write time of NOR compared to NAND. "We believe we can increase the write speed by 10 times in the next twelve months and by 30 times in the next twelve to eighteen months," said Van Deventer.

Intel had considered, but rejected, using Saifun's NROM flash technology, said Van Deventer. Intel's main rival, Spansion, the top supplier of NOR flash, is using the Saifun technology for flash storage.

Saifun said NOR die size is three times larger than NROM on the same process geometry, and Dr Bertrand Cambou, CEO of Spansion, said: "Mirrorbit [AMD's name for NROM] is between 1.5 times to three times cheaper than floating gate NOR technology."

Probably because of these engineering challenges, Intel is not giving any date for entering the flash data storage market.

 

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