Samsung Electronics says it has started production of embedded multi-chip package (eMCP) memory for smartphone designs.
The embedded memory is low power DDR2 (double-data-rate 2) DRAM made with 30nm process technology and NAND flash memory using 20nm-class technology.
Embedded memory is expected to become an important element in smartphone data storage as platform software and web browsing capabilties increase in complexity.
The advantage of embedded memory is lower power consumption and a simpler design process.
"As the need is growing for more advanced software and increased data storage in smartphones and tablets, mobile device makers are expected to introduce embedded memory solutions throughout 2012 that offer higher performance and density," said Myungho Kim, v-p of memory marketing at Samsung Electronics.
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Samsung is expected to put a focus on its eMCP product range in 2012.
Samsung's embedded multi-chip packages incliude 4Gbyte device based on 20nm-class NAND flash memory for data storage. There is also 256MB, 512MBs or 768MBs of 30nm-class LPDDR2 DRAM for higher performance mobile devices. (Each is equivalent to 2Gbit, 4Gbit and 6Gbit, respectively.)
The 30nm-class LPDDR2 DRAM chip will offer smartphones a data transmission speed of 1,066Mbit/s, which doubles the performance of the industry's previous mobile DRAM (MDDR).
When compared to a 40nm LPDDR2 DRAM, the 30nm LPDDR2 DRAM increases performance by approximately 30%, while consuming 25% less power, said Samsung.
www.samsung.com