Samsung Electronics said it has developed the industry's first 50nm DDR2 DRAM chip.
The 1Gbit memory chip incorporates technologies such as three-dimensional (3D) transistor design and multi-layered dielectric technology.
Claiming a 55% increase in production efficiencies over 60nm devices, the firm said it uses a selective epitaxial growth 3D transistor. “With a broader electron channel this optimises the speed of each chip's electrons to reduce power consumption and enable higher performance,” said the firm.
The dielectric layer sustains higher volumes of electron to increase storage capacity, ensuring higher reliability in storing data.
Samsung said the 50nm process can be applied to a range of DRAM chips including graphics and mobile DRAM. Volume production is planned for 2008.
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