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RF mixers reduce distortion in 4G basestations, says IDT

Richard Wilson
Monday 19 December 2011 00:01

Integrated Device Technology has expanded its analogue wireless infrastructure product line with two low-distortion RF to intermediate frequency (IF) mixers for cellular basestations.

The IDT F1150 and F1152 are dual 1700-2200MHz RF to IF mixers with ultra linear (+42 dBm) third-order intercept point (IP3O) for good intermodulation rejection, making them suitable for multi-carrier, multi-mode cellular systems found in 4G wireless basestations.

“The low power consumption and low IM3 distortion of the IDT F1150 and F1152 address a key need for our customers’ 4G basestation solutions, which are being deployed at an intense pace," said Tom Sparkman, general manager and v-p of the communications division at IDT.

According to the supplier, the devices are designed to improve system third-order intermodulation (IM3) performance and reduce power consumption, resulting in improved quality of service.

"This will result in smaller enclosures with increased reliability in 4G wireless infrastructure applications," said IDT.

"The mixers reduce power consumption and improve IM3 distortion by over 15 dB for better signal-to-noise ratio (SNR), allowing customers to improve performance with a higher front-end gain," said the supplier.
 
The IDT F1150 and F1152 complement the recently announced IDT F1200 low-noise digitally controlled IF variable gain amplifier (VGA) in IDT’s growing portfolio of RF signal path products. These products leverage IDT’s analog expertise and rich digital heritage to provide system-level solutions that optimize customers’ applications.
 
The IDT F1150 (high-side injection) and F1152 (low-side injection) are currently sampling to qualified customers and are available in a 36-pin 6x6 mm QFN package. 

www.idt.com/go/RF

 

 

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