Fairchild has introduced a mosfet and Schottky diode in a 0.55mm high package for battery charging and power-multiplexing.
The 20V 3A 120m[ohm] p-mos FDFMA2P859T is 2x2mm and aimed at wearable phones, media players and medical devices.
Inside, the integrated Schottky offers under 0.54V drop at 1A, and 1uA leakage with 10V reverse bias.
"These attributes are important in improving performance and efficiency in linear mode battery charging and power-multiplexing applications" said Fairchild.