Microsemi Debuts InGaAs/InP Photodetectors For Fiber Optic Apps News from E-InSite Microsemi Corp. today said it is sampling its line of high-speedindium gallium arsenide (InGaAs) photodetectors for fiber optic applications in the 1310nmand 1550nm spectral range, with volume production expected by summer 2001.
The Santa Ana, Calif.-based maker of analog, mixed-signal and discrete semiconductorssaid the series, dubbed the
MXP4000, is designed specifically for fiber optic transpondermodules and hybrids. The indium phosphide-based InGaAs photodectors offer a breakdownvoltage of 20V, with bandwidth options from 156 Mbit/sec to 10Gbit/sec, Microsemi said.Initially, the four-product series is being offered in die form for manufacturers ofphotodiode modules, supervisory vertical cavity surface emitting laser (VCSEL) monitoringcircuits and combination PIN photodiode-transimpedance amplifier hybrids.
Microsemi
announced its 850nm InGaAs photodetectors in September. The company said itwill continue to expand its expertise in compound semiconductors by focusing on III-V andII-VI materials. Th MXP4000 series is the fourth product the company has introduced sinceJuly.
"Customers in this niche marketplace are eager to have another supplier to supportthe rapid growth of optical communication networks," said Manuel Lynch, vicepresident of marketing and business development, in a statement. "Their interest hasbeen very high during our evaluation of our prototype designs for theseapplications."
Microsemi today also announced that it has almost completed the design stage of itsfirst InGaP hetero-bipolar transistor (HBT) transimpedance amplifier, which willcomplement its InGaAs/InP detector line. The company expects these devices to samplebeginning in March 2001.
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