Samsung Electronics is in volume production of 1Gbit DDR2 DRAM memory using 80nm process technology.

According to the company, the use of 80nm process technology produces one of the industry's smallest DRAM packages (11x11.5mm). This is 36% smaller than the 11x18mm package required for a DRAM chip utilising 90nm and nearly as small as the 512Mbit DRAM, which is half the size of a 90nm 1Gbit chip, said Samsung.

Most 1Gbit DRAM chips are stacked in high-capacity DRAM modules for next-generation servers. These modules include the 4Gbyte fully buffered dual In-line memory module (DIMM) and the 2Gbyte small outline dual inline memory module (SODIMM).

The market research firm Gartner estimated that the global DRAM market is worth $28.7bn this year and predicted that will rise to $37.8bn by 2008.

The 1Gbit DRAM currently represents 8% of total market share, but is expected make up 36% of all DRAM sold in 2008.

Samsung is producing all densities of DDR2 DRAM at the 80nm node. It has been producing the first 512Mbit DDR2 DRAM at the 80nm node since March.