E2v is continuing its microprocessor agreement with Freescale Semiconductor and is considering expanding the scope of the deal to include magnetoresistive random access memory (MRAM) products.

The agreement supports E2v's production of extended reliability versions of its microprocessors through additional screening, packaging and qualifications to meet military and aerospace standards.

“We also look forward to expanding our portfolio to include MRAM products. They will ideally complement our microprocessor products for embedded applications in severe environments by combining higher speed and increased reliability compared to other non-volatile memory solutions,” said Thierry Gouvernel, general manager of E2v’s microprocessors and services business.

“Freescale’s long-established relationship with E2v is a key factor in the growing adoption of Power Architecture technology-based microprocessors in the aeronautics and defence industries,” said Denis Griot, senior v-p and general manager EMEA region for Freescale.  

MRAM is a memory technology that combines fast read and write cycle times with non-volatility and long term endurance. The technology protects data in the event of power loss and does not require periodic refresh.

MRAM is of interest to customers in the defence and aerospace sector becasue it is a non-volatile memory capable of providing data retention for more than 10 years, its read/write cycles of 35ns and its robustness with data stored by polarisation rather than charge, meaning that no leakage or soft errors occur.