E2v has introduced a magnetoresistive random access memory (MRAM), which is an extended-reliability version of the MR2A16A from Freescale Semiconductor.

The standalone 4Mbit MRAM device, which is a result of the recent alliance between e2v and Freescale, is available with full operational performance across the entire military temperature range.

The non-volatility memory is designed to protect the data when unexpected events, such as a power loss, occur without the need of an external battery back-up.

According to the supplier, the EV2A16A operates at SRAM speeds with symmetrical 35ns read and write cycles. Its standard SRAM interface allows a seamless system integration of this memory device by directly connecting to standard memory controllers.

“The EV2A16A is the first device of a new family that is scheduled to be offered with higher screening grades for this 4Mbit device. The company also plans to introduce higher density products within the coming months,” said Eric Marcelot, marketing manager at e2v.

The EV2A16A is available in a standard 44-lead TSOP type II package in both extended (-40 to +110 deg C) and military (-55 to +125 deg C) temperature ranges.