NXP Semiconductors has announced its first power transistor which uses the latest version of its LDMOS technology.

The LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology now in its seventh generation should provide a 20 per cent increase in power density and two per cent better power efficiency.

The thermal resistance is improved by over 25 per cent compared to the previous generation.

First prototypes of the NXP Gen7 LDMOS basestation prior transistor will be demonstrated at the IEEE MTT-S International Microwave Symposium in Atlanta in June.

Many basestation transmitter designs are currently based on the Doherty architecture, and NXP has targeted Doherty designs with the power transistor technology which operates at up to 3.8 GHz, and offers 25 per cent lower output capacitance.

“As mobile operators start to offer ultra-fast services based on technologies such as HSDPA and LTE, power demands on the wireless network infrastructure are reaching unprecedented levels,” said Mark Murphy, marketing group manager, RF power product line, NXP Semiconductors. 

As a result improved power efficiency is an important feature of the Gen7 LDMOS technology, said Murphy.

Engineering samples of the BLC7G22L(S)-130 will be available in the third quarter of 2008.  Additional products based on NXP Gen7 LDMOS technology will be released in 2009.