X-Fab Silicon Foundries has qualified its Malaysian facility in Kuching, Sarawak for volume production on the 200mm line of the company’s 0.35µm high-voltage process technology called XH035.

Intended to fab RF and power management, mixed-signal and systems-on-chip devices, the XH035 CMOS technology can be expanded with a range of add-on modules including three- and four-layer metallisation, a second gate-oxide for transistors with varying breakdown voltages of up to 50V, well isolated 3.3 and 5-Volt transistors, and EEPROM storage blocks.

The process comes with a range of active and passive devices to address analogue/mixed-signal design needs. These devices include high-voltage NMOS, PMOS and DMOS transistors, double-poly and MIM capacitors, high-ohmic and low-TC resistors.

In addition, the process offers excellent matching, low on-resistance high-voltage devices and embedded NVM options. It also features a variety of dense standard cell libraries optimised for area, speed, low power or low noise; and I/O libraries, including ESD support and numerous verified analogue IP libraries.

In addition, RF CMOS building block extensions are available for applications up to 2.4GHz, for Bluetooth, WLAN and ISM transmitters/receivers.

Germany-based foundry X-FAB also has facilities in the US and the UK at Plymouth.