IM Flash Technologies, the NAND flash joint venture between Micron Technology and Intel, has cranked up the pressure on NAND flash rivals Samsung Electronics, Toshiba and Hynix Semiconductor, by moving to a new generation of process technology much earlier than expected.
IM Flash says it has begun volume production of NAND flash on a 34nm process at the company's fab at Lehi 
in Utah. The process delivers a 32Gbit die measuring 172mm² which fits into a TSOP.
Earlier this year, Samsung, Hynix and Toshiba moved to 40nm processes which they are still ramping which suggests that they may not be planning to move to a new process generation until 2010.
This would give IM Flash a considerable cost advantage in the market which might last as long as a year.
The IM Fash process is being used to make 32Gbit multi-level 
cell (MLC) chips, says the company, and it says that more than half the capacity at Lehi will be on 34nm by the end of the year.
Lower density MLC parts and single level cell parts will be added in 'early' 2009, says IM Flash.
"We have made great strides in NAND process capability and are now in a leadership role with 34nm production," said Brian Shirley, vice president of Micron's Memory Group.
"The results from IMFT continue to exceed our expectations," said Randy Wilhelm, vice president and general manager, Intel NAND Solutions Group. "With such clear leadership in NAND manufacturing, we are able to offer our customers NAND solutions with great value, performance and low power."