Engineers at the US National Institute of Standards and Technology (NIST) have made a flexible memory element.
"The switch's performance bears a strong resemblance to that of a memristor, a resistor that changes its resistance depending on the amount of current that is sent through it. 
And it retains this resistance even after the power is turned off," said NIST.
The active element is a titanium oxide layer spin-coated as a sol-gel onto a polymer substrate.
The switch is said to operates on less than 10V and still function after being flexed 4,000 times.
"Because the active component of our device can be fabricated from a liquid, there is the potential that in the future we can print the entire memory device 
as simply and inexpensively as we now print a slide on an overhead transparency," said NIST researcher Nadine Gergel-Hackett.
See also: HP nano device implements memristor