Engineers at the US
National Institute of Standards
and Technology (NIST) have made a flexible
memory element.
"The switch's performance bears a strong resemblance to that of a
memristor, a resistor that changes its resistance depending on the
amount of current that is sent through it. And it retains this
resistance even after the power is turned off," said NIST.
The active element is a titanium oxide layer spin-coated as a
sol-gel onto a polymer substrate.
The switch is said to operates on less than 10V and still
function after being flexed 4,000 times.
"Because the active component of our device can be fabricated
from a liquid, there is the potential that in the future we can
print the entire memory device as simply and inexpensively as we
now print a slide on an overhead transparency," said NIST
researcher Nadine Gergel-Hackett.
See also:
HP nano device implements
memristor