Fairchild
has introduced a mosfet and Schottky diode in a 0.55mm high package
for battery charging and power-multiplexing.
The 20V 3A 120m[ohm] p-mos
FDFMA2P859T
is 2x2mm and aimed at wearable phones, media players and medical
devices.
Inside, the integrated Schottky offers under 0.54V drop at 1A, and
1uA leakage with 10V reverse bias.
"These attributes are important in improving performance and
efficiency in linear mode battery charging and power-multiplexing
applications" said Fairchild.