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Issue: 16 - 22 Dec, 2009
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IMFlash Introduces 25nm NAND Flash

David Manners
Monday 01 February 2010 05:39

Intel and Micron say they will be in volume production in Q2 2010 on a 25nm process delivering 64Gbit 2 bit-per-cell NAND memories at their IM Flash joint venture.

The 25nm, 8GB (64Gb) device is sampling now, says IM Flash.

The167mm²die fits into an industry-standard, thin small-outline package (TSOP).

Multiple 8GB devices can be stacked in a package to increase storage capacity.

A 256GB solid-state drive (SSD) can now be enabled with 32 chips, a 32GB smartphone needs four chips and a 16GB flash card requires only two.

Intel and Micron say they have doubled NAND density roughly every 18 months, starting production with a 50nm process in 2006, followed by a 34nm process in 2008.

"To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits," said Brian Shirley, vice president of Micron's memory group. "This production technology will enable significant benefits to our customers through higher density media solutions."

"This will help speed the adoption of solid-state drive solutions for computing," said Tom Rampone, vice president and general manager, Intel NAND Solutions Group.

In Q309, according to iSuppli, Intel had 6.1% of the worldwide NAND flash market, Micron had 7.7%, Numonyx had 2.3%, Hynix had 10% but the lion's share was held by Toshiba with 34% and Samsung with 39%.

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