The market for silicon carbide (SiC) and gallium nitride (GaN) power devices could be worth as much as $160m within three years, according to market watcher IMS Research.
This would represent a significant growth in the market which was worth just $22,000 in 2009.
According to IMS, SiC Schottky diodes are anticipated to account for almost one third of the total market with the bulk of revenues attributed to PFC power supplies.
“The 
next three years will be an important stage in the development of the SiC and GaN power device market. Applications other than PFC power supplies are forecast to begin to adopt these new power devices,” said Josh Flood, research analyst at IMS Research.
IMS Research recently published its new report “The World Market for SiC & GaN Power Semiconductors – 2010”.