IQE has won funding for research into compound semiconductor laser products for the next generation of
high speed broadband access devices.
The Wales-based semiconductor wafer manufacturer has received £1m in R&D funding from the government-backed Technology Strategy Board (TSB).
It is anticipated that the research could one day lead to laser diode-based optical communictaions systems capable of supporting internet access technology with speeds up to 10Gbit/s.
"We are looking to solve the paradox of producing diode sources with telecoms grade quality with consumer grade pricing for this last link
of access to the home," said Dr Wyn Meredith from IQE.
"We are already seeing unprecedented growth in InP based epitaxial products driven by FTTH deployment in Asia, and
we are preparing to address Next Generation network expansion with high value add foundry products to enable our customers to react
quickly," said Meredith.
IQE and chip foundry partner CST Global have been collaborating on development of high specification diode laser components for such applications.
The partners have been awarded three feasibility studies in the programme in a parallel approach to look at low cost laser sources for uncooled, high speed, extended reach Fibre To The Home (FTTH) applications based on AlInGaAs laser products.
"This phase of optical network expansion is rewriting the rulebook in terms of the cost - quality equation; we are enabling a new breed of
component vendors," said Meredith.