At 20nm, finfet and fully depleted SOI are on a par, ST’s Gilles Thomas told the European Nanoelectronics Forum 2011 in Dublin this morning. "Don’t panic," he said, "the transistor architecture on finfet and FDSOI are the same but for a rotation of 90º."
Thomas added: "They (finfet and FDSOI) will converge when the buried oxide (BOX) thickness reduces to the gate oxide (TOX)."
After 122.5 person-years, DECISIF, the EU-backed Catrene project for developing SOI manufacturing technology involving AMD, GloFo, ST, Soitec, Siltronic and others, has decided that fully depleted SOI(FDSOI) on ultra-thin body and buried oxide (UTBB) substrates is the way ahead,
The project set out to look at performance boosters for SOI processes and, after 18 months, decided that UTBB was the approach to concentrate on.
"Scaling is much better, short channel effect is much better, there is no floating body effect and the channel is undoped," said Thomas.
The UTBB is an industrial reality, said Thomas, and is the optimal substrate for FDSOI on 28nm.