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For more on memory, NAND, DRAM, SRAM and DDR content, see Components/Memory

Samsung says OneNAND flash jumps

Richard Wilson
Thursday 22 February 2007 00:00

Samsung said it more than doubled production in 2006 of its hybrid memory devices known as OneNAND.

Last year, the firm produced 117 million units, in 512Mbit equivalent, of its OneNAND flash fusion memory chips. This represented a 130 per cent increase in production volume from 2005.

Samsung launched a NAND flash chip with a NOR interface over two years ago. The hybrid memory devices combine a single-level-cell NAND core with SRAM and logic elements to emulate a NOR flash interface.
 
"OneNAND provides a maximum 'read' speed of 108Mbyte/s, four times faster than conventional NAND flash memory, and a 'write' speed of up to 17Mbyte/s, 34 times faster than multi-level-cell NOR flash memory," said the firm.

The device can store up to 500 sequential photographs from a five-megapixel camera phone without any click-to-click delay between images.   

OneNAND is available in densities from 256Mbit to 2Gbit. Last year, STMicroelectronics licensed the hybrid memory technology.

 

 

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