Samsung says it has begun operations of its largest memory semiconductor fabrication facility. It also started mass production of the industry's first double data rate-3 (DDR3) DRAM based on 20nm process technology.
Samsung began construction of Line-16 in May 2010 and completed installation of equipment for clean rooms this May. Trial production began in June and the facility was made operational for mass production in August.
Starting this month, Samsung began mass production of 20nm-class NAND flash memory chips, with a projected volume of more than 10,000 12-inch wafers monthly.
Samsung plans to ramp up production of NAND flash memory to meet market demand, and will begin production of more advanced memory semiconductors with high density and performance using 10nm class process technology next year.
Samsung also announced the world's first mass production of 20nm class 2Gbit DDR3 DRAM. It has plans to develop a 20nm class DDR3 component in 4Gbit density by the end of the year.
www.samsung.com/GreenMemory