International Rectifier has introduced its first commercially-available Gallium Nitride (GaN)-based power devices.
The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load (POL) applications.
They integrate a fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a flip chip package and will more than double the switching frequency of equivalent silicon-based power stage devices.
The iP2010 features an input voltage range of 7V to 13.2V and output voltage range of 0.6V to 5.5V with an output current up to 30A. The device operates up to 3MHz.
Operating up to 5MHz, the pin-compatible iP2011 features the same input and output voltage range but is optimised for an output current up to 20A.