GloFo and Samsung are to synchronise their high-performance 28nm process across four fabs.
Last year they synchronised their low power 28nm processes.
The four fabs, all 300mm, are GloFo’s in Dresden, and New York, and Samsung’s in Korea and Austin, Texas.
The two companies say they are working with ‘several customers’ to optimise processes and tooling for both the low-power and high-performance 28nm HKMG technologies.
Synchronisation helps ensure consistent production worldwide, enabling customer chip designs to be produced at multiple sources with no redesign required.
The four fabs offer ‘an unparalleled de-risking of supply chain uncertainties’, say the companies.
“This 28nm process will be the first semiconductor technology to truly eliminate the border between desktop computers and mobile devices,” says Samsung’s Jay Min.
The high performance process is based on the 28nm “Gate First” HKMG technology utilised for the low power process.
As with the low power 28nm technology that is fully design-enabled today, an SoC design platform will be implemented for the high performance offering to enable seamless customer design-in to the multiple global manufacturing sites.