Cree has released samples of two gallium nitrate (GaN) HEMT transistors for use in Wimax applications covering the 4.9 to 5.8GHz frequency band.

The firm claims its transistors, CGH55015F and CGH55030F, are the first released GaN HEMT Wimax products specified to operate at 5.8GHz.

Rated at 15 and 30W peak, the devices provided potential benefits, said Cree, which include a four-fold increase in efficiency compared with similar power level GaAs Mesfets, and higher frequency operation than commercially available silicon LDMOS.

With a 5.5 to 5.8GHz Wimax signal, linearity is better than 2.5 per cent EVM (error vector magnitude) at or below 2.5W average in the 55015, and at up to 4W average in the 55030. Under the same conditions drain efficiency is 25 per cent.

See http://www.cree.com