Mannerisms

As well as NEC, other IDMs using the MoSys 1T-SRAM for embedded memory are NXP, Fujitsu, Agilent, Sanyo and Freescale, as well as foundries TSMC, UMC, Chartered and Tower.
The technology has recently been Last year it started on 65nm process development. Now it's on 55nm.

"The move to 55nm is further evidence of the rapid scalability of our 1T-SRAM technology. We have been able to continuously scale this technology from 250nm to the current 55nm node. We will continue to rapidly scale to 45nm and beyond," says Chet Silvestri, president and CEO of MoSys.

1T SRAM is basically a DRAM cell but the refresh function is hidden from the user.
The advantage of 1T SRAM over embedded DRAM is that it can be made in standard CMOS which is not the case with embedded DRAM.

Mosys claims its 1T SRAM reduces power consumption by a factor of four compared to conventional 4T and 6T SRAM, it can halve the silicon area required for any given density and has the speed required for high performance networking, graphics and gaming.