Having already set up seven semiconductor production lines in its plants in Hwaseong and Xian, China, the Hwaseong plant will aim to migrate to more advanced process nodes in 2014, while the Xian plant will focus on ramping up its vertical-NAND (V-NAND) flash capacity.
The Line-17 fab, which is slated for completion in the second half of 2014, will focus on offering wafer foundry services using 20nm and below processes.
Hynix’s main capex for 2014 will be used to build its M14 fab. Construction of the M14 line is expected to begin in mid-2014.
Companies spending over $1 billion on capex this year include Micron, Toshiba and SanDisk.
Micron is expected to accelerate the migration of its DRAM production to 20nm process, while also ramping up its NAND flash capacity.
Toshiba and SanDisk will expand the production capacity of V-NAND flash at its plant in Yokkaichi.
For non-memory chips, the 2014 capex of Intel, TSMC, GloGo and UMC..
Intel will deepen its development of 14nm and below processes, TSMC will focus on 16nm FinFET process. GloFo and UMC will raise the ratios of their 28nm production,while beginning to develop 20nm and below technologies.
Combined 2014 capital spending of these semiconductor firms with a capex budget of over US$1 billion in the year is expected to amount to US$49.3 billion, Digitimes Research estimates.
The top-three DRAM chipmakers will move to upgrade their processes to 25-21nm, while the NAND flash industry will focus on ramping V-NAND flash production as well as to migrate to 19-16nm processes.