IBM and its process technology partners may have found the Holy Grail in their search for a high-k dielectric material which is practical at the 32nm process node and below.
The high-k/metal gate (HKMG) material when used in evaluation circuits registered performance improvements on 32nm technology circuits of up to 35 per cent over 45nm technology circuits at the same operating voltage.
Continue reading "When high-k dielectric is the Holy Grail for IBM, Freescale and Samsung" »
Bath is the centre for the UK’s latest basestation conference which is taking place this week, and among the early movers at the event are Nitronex, a GaN-on-Silicon RF power IC specialist and Nujira who are teaming up to create a WiMAX power amplifier reference design.
The interesting point about this is the choice of GaN technology which should help the power efficiency which can be an issue with WiMAX transmissions.
NEC first showed a gallium nitride (GaN) power transistor amplifier in 2006, which it claimed had the world's highest output power level of 400W with low-distortion characteristics.
According to the companies, using a 4 channel WCDMA waveform it has been possible to realise over 44dBm of linear power with 45% efficiency at a linearity of -55dBC.
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