Toshiba drops forward voltage with GaN-on-Si lighting LEDs
“Both have been developed as light sources for general lighting applications, including light bulbs, base lights, down lights and ceiling lights, street lights and floodlights,” said the firm.
They are made on a gallium nitride-on-silicon (GaN-on-Si), which is intended to reduce production cost, and performance seems similar to more conventional GaN-on-sapphire and GaN-on-SiC devices.
2.85V at 350mA
135 lm/W at 1W (350mA), 5,000K, Ra70
3x3mm no lens
5.76V at 100mA
118 lm/W at 0.6W (100mA), 5,000K, Ra80
Six colour temperatures from 2,700 to 6,500K will be available.
Mass production of both series will start at the end of March.