Cree, Microsemi Partner For SiC-Based Schottky Diodes
Cree, Microsemi Partner For SiC-Based Schottky Diodes News from E-InSite
Durham, N.C.-based Cree Inc. and Microsemi Corp. of Irvine, Calif., today said theyhave inked a deal to jointly develop silicon carbide- (SiC) based Schottky diodes.
Under terms of the letter of intent signed by both companies, Cree (nasdaq: CREE) willprovide SiC chips and Microsemi (nasdaq: MSCC) will develop packaging applications andmarketing distribution channels.
The development agreement will call for Cree’s SiC Schottky diodes to beincorporated into Microsemi’s patented Powermite line of packages. The companies planto introduce a line of high voltage Schottky diodes based on SiC technology.
Applications for SiC Schottky diodes could include power conditioning for highfrequency power supplies and power factor correction equipment, the companies said.Compared to silicon PiN diodes, SiC Schottky diodes can offer much lower switching lossesand higher switching frequencies, according to the companies.
As much as 50 percent of the power loss in a power circuit is caused by the switchinglosses of the diode, but with the higher efficiency of SiC, Microsemi and Cree said theybelieve the power loss would decrease significantly. That would result in the overallpower efficiency in the circuit to increase by as much as 10 percent. The lower powerconsumption should allow for a smaller heat sink and switch requirement, which leads toreduced cost and size of the circuit, the companies said.
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