They switches optimise antenna characteristics to allow for highest data rate operation in relevant LTE bands.
They enable further reduction of current consumption and come in BGA1xGN10 Packages.
They are made on Infineon’s 130nm RF CMOS process.
They are designed for high ruggedness, low parasitics and highest linearity in order to withstand critical mismatch conditions at the antenna.
The ICs are key to optimise antenna efficiency in relevant LTE bands. Improved antenna efficiency directly translates into better signal quality and fastest data transmission.
All devices offer generic GPIO interfaces for smooth antenna control and system integration.