MOSIS is supplying photonics ICs via a co-operation with Imec, the Tyndall National R&D Institute of Ireland and ePIXfab – the European Silicon Photonics Platform co-funded by the consisting of the Imec-UGent partnership, CEA-LETI, IHP of Germany), TNO of Holland, Tyndall, VTT of Finland and CMC Microsystems of Canada.
“MOSIS will offer its first access to a mature silicon photonics infrastructure, with the option for follow-on production,” says Wes Hansford, MOSIS Director.
The partnership gives MOSIS’ customers access to Imec’s silicon photonics processes and Tyndall’s silicon photonics packaging technology.
Imec’s silicon photonics platform enables cost-effective R&D of silicon photonic ICs for high-performance optical transceivers (25Gb/s and beyond) for telecom, datacom, and optical sensing for life science applications.
The offered integrated components include low-loss waveguides, efficient grating couplers, high-speed silicon electro-optic modulators and high-speed germanium waveguide photo-detectors.
A comprehensive design kit to access Imec technologies will be provided. Moreover, Tyndall, as a partner of ePIXfab, offers the ability to provide packaged silicon photonics devices.
This includes the design and fabrication of custom photonic packages, fiber coupling (single and arrays) and electrical interconnects. Design rules to support these packaging capabilities will also be provided.
“Companies can benefit from Imec’s silicon photonics capability through established standard cells, or explore the functionality of their own designs in MultiProject Wafer runs,” says Imec’s Philippe Absil.
The first ePIXfab-Europractice run for passive silicon photonics ICs is open for registration from June 2013 with design deadline September 9th 2013. MOSIS’ customers can register for this run and obtain the design kit via MOSIS in June 2013.
Imec’s Si Photonics 200mm wafer platform offers extensive design flexibility and includes:
Tight within-wafer silicon thickness variation 3sigma < 2.5nm
3-level patterning of 220nm top Si layer (193nm optical lithography)
poly-Si overlay and patterning (193nm optical lithography)
3-level n-type implants and 3-level p-type implants in Si
Ge epitaxial growth on Si and p-type and n-type implants in Ge
Local NiSi contacts, Tungsten vias and Cu metal interconnects
Al bond pads
Validated cell library with fiber couplers, polarization rotators, highly efficient carrier depletion modulators and ultra-compact Ge waveguide photo-detectors with low dark current.
Design kit support for IPKISS framework, PhoeniX Software and Mentor Graphics software.
Tyndall’s Si Photonics Packaging Technology enables:
Passive device packaging, single and multi-fiber arrays to grating couplers
Active device packaging, modulators and detectors with electrical ports and fiber arrays
Custom packaging requirements (mechanical, thermal stability etc.)