Freescale Semiconductor’s latest GaAs low noise amplifier is designed to improve RF receiver performance in small cell basestations.
The enhancement-mode pHEMT low noise amplifier (LNA) can be used in wireless systems operating between 700 and 1400MHz.
The noise figure of the MML09231H is 0.36dB at 900MHz. Low…
Toshiba has announced a family of 600V mosfets with integrated high-speed intrinsic diodes.
Part of the firm’s fourth generation of 600V super-junction devices, they are aimed at switching power supplies, micro inverters, adaptors, and photovoltaic inverters.
TK16A60W5 is supplied in a TO-220SIS package. Maximum current 15…
STMicroelectronics has launched the 2013 iNEMO Design Contest in Taiwan.
It is the third time ST is running the competition for students and young engineers in Taiwan to design new applications built around ST’s iNEMO MEMS-based multi-sensor technology.
This year’s contest encourages contestants to use sensing…
Cree has announced it first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package.
When replacing a silicon module with equivalent ratings, Cree claims the 1.2kV, 50A six-pack module can reduce power losses by 75%.
“This leads to an immediate 70% reduction…
Next generation smartphones are likely to have 40 radios in each handset to support the plethora of mobile standards and the need for multiple radio front-end circuits will have an impact on others parts of the design.
One example is the design of the digital pre-distortion receiver which…
Advanced Power Electronics two dual mosfets for battery management and protection applications, one a p-channel pair and the other n-channel.
On-resistance is low: 16mΩ for the n-channel AP9922GEO-HF-3 (20V, 6.4A) and 25mΩ for the p-channel AP9923GEO-HF-3 (12V, 7A).
“Both devices…
The device features a +/-0.5% voltage threshold accuracy at room temperature and +/-1.5% voltage threshold accuracy over the -40 deg C to +125 deg C temperature range
The LED driver IC delivers a power factor of 0.7 without needing a high voltage input electrolytic capacitor