Cree aims at the military with half kilowatt GaN HEMT
Cree has released a 500W gallium nitride HEMTs for 1.2-1.4GHz L-Band radar amplifier systems.
According to the firm, they have “the highest known L-Band efficiency performance at 85°C”.
Applications are foreseen between UHF and 1.8GHz in: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and military telemetry.
The devices are being made on Cree’s 50V 0.4µm GaN-on-SiC foundry and are available in ceramic/metal flange and pill packages – claimed to be smaller than competing GaAs or silicon RF technology.
Inputs are internally pre-matched, and the 500W device has 17dB power gain and 70% typical drain efficiency at 85°C.
The 250W device, said Cree, features 330W typical output power as well as 18dB power gain and 77% typical drain efficiency.
Both have 0.3dB pulsed amplitude droop.
Large-scale models are available at Agilent ADS and AWR Microwave, and Digikey is planning to have stock by September.
There is a CGHV14500 video, in which it is described as a 900MHz-1.5GHz transistor.