Electronica: IDT chip cuts glitches in 4G/3G basestations
Integrated Device Technology has showed a digital step attenuator that it claims will reduce transient “glitches” during most significant bit transitions by up to 95% in multi-standard 4G, 3G, and 2G mobile basestations.
The IDT F1950 and F1951 digital step attenuators (DSAs) are designed for use in base transceiver station receive, transmit, and digital pre-distortion paths.
The company claimed its technology can eliminate attenuation setting overshoot (glitches) from the transmit and receive paths of cellular communication systems, while at the same time reducing insertion loss and improving distortion performance.
“IDT’s new DSAs are another key building block of the communications signal chain that our customers are demanding,” said Tom Sparkman, v-p and general manager of the communications division at IDT.
“These DSAs limit glitches to less than 0.5dB,” said Sparkman.
The IDT F1950 and F1951 operate from 100MHz to 4000MHz, and can communicate via a parallel or serial interface.
The devices are suitable for setting the power level in 4G long-term evolution (LTE), time-division duplexing (TDD), wideband code division multiple access (WCDMA), extended global system for mobile communications (EGSM) and other popular systems.
The DSAs feature low insertion loss of less than 1.3dB at 2GHz and are accurate to less than 0.2dB over temperature.3G, 4G, design, IDT