Electronica: Microsemi uses GaN in high power RF transistor

Microsemi has introduced a S-band 500W RF transistor which can be used in high-power air traffic control airport surveillance radar (ASR) systems that monitor aircraft in the terminal within approximately 100 miles of an airport.

The transistor is produced on gallium nitride (GaN) on silicon carbide (SiC) technology which is claimed to offer simplified impedance matching and higher peak power handling.

Single stage pair provides 1kW peak output power with margin, four-way combined to provide full system 2kW peak output power.

The process also supports an operating voltage of 65V.

“Amplifier size is 50% smaller than devices built with silicon bipolar junction transistors (Si BJT) or laterally diffused metal oxide semiconductor (LDMOS) devices,” said Microsemi.

The 2729GN-500 transistor is designed to provide 500W of peak power with 12dB of power gain and 53% drain efficiency over the band 2.7 to 2.9GHz to provide the maximum power in a single device covering this band.

The 2729GN-500 is offered in a single-ended package and is built with 100% high-temperature gold (Au) metallisation and wires in a hermetically solder-sealed package for long-term military reliability.

www.microsemi.com

 

Tags: design, Microsemi, power, RF

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