Microsemi uses GaN on SiC for power RF transistor
Microsemi has introduced a range of RF transistors with peak power handling of 700W.
Designed originally for high-power air traffic contro, secondary surveillance radio (SSR) applications, the 1011GN-700ELM operates at 1030MHz and supports short- and long-pulsed extended length message (ELM).
The new transistor is based on gallium nitride (GaN) on silicon carbide (SiC) technologies, which means it can be used for high-power electronics applications.
The supplier offers GaN on SiC transistors at 250, 500 and 700W for secondary surveillance radar search and tracking applications.
Under development are GaN on SiC transistors to be rolled out later this year.
Microsemi’s upcoming product lineup includes multiple high-pulsed power GaN on SiC transistors for both L, S and C-band radar systems.
The company also offers a suite of GaN microwave power devices, which includes the following S-band radar models: 2729GN-150, 2729GN-270, 2731GN-110M, 2731GN-200M, 3135GN-100M, 3135GN-170M, 2735GN-35M and 2735GN-100M.
Several new products are in development for L-band avionics products covering 960-1215 MHz; L-band radar covering 1200-1400MHz; and S-band radar, higher power devices covering 2.7-2.9 GHz.