Memory Cards News

Intel, Micron plan crosspoint memory

Intel and Micron plan to have samples of a 128Gbit 3D crosspoint memory by the end of the year with commercial shipments in 2016. Intel claims that the new memory, which it calls XPoint, writes ‘up to 1000 faster than NAND’ and has 1000 times the endurance of NAND. The…

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Fujitsu sampling 1Mbit FRAM in WL-CSP package

Fujitsu is sampling a 1Mbit SPI FRAM in an 8-pin WL-CSP device measuring 3.09×2.28×0.33mm which reduces the surface mounting area by 77%, and the device height by 80% compared to an S0P-8 package. The WL-CSP package makes FRAM suitable for wearable and sensor…

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Micron's 32-layer 3D NAND for production this year

Micron is to move into “low volume” production of a 32-layer 3D NAND device in the second half of this year. Next year Micron says it expects 3D NAND to be a “significant” percentage of its “trade NAND supply”. The device going into production this year will be a…

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Intel and Micron stack NAND flash for bigger SSDs

Intel and Micron Technology are offering their highest density flash memory devices yet which have 3D NAND technology. And the target application is not mobiles but solid state storage in computers. The technology is called 3D because layers of data storage cells are stacked vertically to offer higher capacity in…

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48-layer V-NAND from Toshiba

Toshiba is sampling 3D NAND or V-NAND with 48 layers and a 2bit-per-cell architecture delivering a 128Gbit chip…

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Monolithic terabyte memory IC

Crossbar, the RRAM specialist, says it has solved a major obstacle to RRAM’s commercialisation – what Crossbar calls ‘sneak path current’ which is akin to leakage in CMOS circuits but particularly destructive in RRAMS…

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1.2V NV memory from Adesto

Adesto Technologies launched at Electronica a non-volatile serial memory capable of operating at 1.2V…

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China start-up enables 5TB SSDs

Three year-old Sage Microelectronics of Hangzhou, China has produced an SSD controller IC that enables SSD densities of 5TB…

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