Memory Cards News

Micron's 32-layer 3D NAND for production this year

Micron is to move into “low volume” production of a 32-layer 3D NAND device in the second half of this year. Next year Micron says it expects 3D NAND to be a “significant” percentage of its “trade NAND supply”. The device going into production this year will be a…

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Intel and Micron stack NAND flash for bigger SSDs

Intel and Micron Technology are offering their highest density flash memory devices yet which have 3D NAND technology. And the target application is not mobiles but solid state storage in computers. The technology is called 3D because layers of data storage cells are stacked vertically to offer higher capacity in…

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48-layer V-NAND from Toshiba

Toshiba is sampling 3D NAND or V-NAND with 48 layers and a 2bit-per-cell architecture delivering a 128Gbit chip…

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Monolithic terabyte memory IC

Crossbar, the RRAM specialist, says it has solved a major obstacle to RRAM’s commercialisation – what Crossbar calls ‘sneak path current’ which is akin to leakage in CMOS circuits but particularly destructive in RRAMS…

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1.2V NV memory from Adesto

Adesto Technologies launched at Electronica a non-volatile serial memory capable of operating at 1.2V…

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China start-up enables 5TB SSDs

Three year-old Sage Microelectronics of Hangzhou, China has produced an SSD controller IC that enables SSD densities of 5TB…

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NAND scaling issues becoming more complex

NAND process geometries have become as problematic as logic process geometries with the advantages of further scaling – especially as 3D NAND approaches – being questioned…

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TLC NAND flash gets error correction it needs to takeoff

Interest in triple-level cell (TLC) NAND flash is growing and the high density flash memory technology could have cost benefits over single-level NAND in SSDs, but only if endurance and retention questions marks are addressed. For US-based NAND flash controller supplier Silicon Motion Technology the answer is…

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