Memory Cards News

IDF: Intel gives transistor-less cross point memory a name

Intel has given an indication at Intel Developer Forum (IDF) in San Francisco this week when the transistor-less 3D XPoint non-volatile memory technology it has been developing with Micron, will appear in commercial products. A range of solid state drives (SSDs) which implement the 3D memory technology will…

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Samsung starts production of 48-layer V-NAND

Samsung says it has begun mass production of 48-layer three-bit-per-cell 256Gbit V-NAND. Last week Toshiba said it was beginning pilot production of a 48-layer 256Gbit 3 bit-per-cell V-NAND, which it calls BiCS Flash. In March, Intel/Micron said they were starting…

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Merged memory company adds to fast flash line

Cypress Semiconductor has seen early benefits of its $5bn merger with┬áSpansion with a new 256Mbit memory device added to the Spansion NOR HyperFlash product line. HyperFlash is a high speed memory architecture which can achieve double-data-rate (DDR) read bandwidths as high as 333Mbyte/s for 1.8V…

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Diablo puts flash into servers

Diablo Technologies’ Memory1, an all-flash server system memory technology, puts 4TBytes of memory in slots that currently hold 128Gbytes or 384Gbytes, the company said. By delivering greater capability on fewer servers it claims to reduce┬ádata centre costs by up to 70%. Memory1 is shipping now to select customers…

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Toshiba to sample 256Gbit V-NAND next month

Toshiba is to start sampling a 256GBit, 48-layer, triple-level cell V-NAND memory next month. BiCS Flash, as Toshiba calls it, is based on a 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND flash memory, while enhancing write/erase reliability endurance and boosting…

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ReRAM closer to embedded 28nm chips, says Imec

Intel’s super fast flash using a 3D cross-point architecture is not the only advanced semiconductor memory game in town. Another of the more interesting next generation memory technologies is resistive RAM (ReRAM). This is particularly interesting for integrated large volume embedded memory on to processors to provide high…

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Intel, Micron plan crosspoint memory

Intel and Micron plan to have samples of a 128Gbit 3D crosspoint memory by the end of the year with commercial shipments in 2016. Intel claims that the new memory, which it calls XPoint, writes ‘up to 1000 faster than NAND’ and has 1000 times the endurance of NAND. The…

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Fujitsu sampling 1Mbit FRAM in WL-CSP package

Fujitsu is sampling a 1Mbit SPI FRAM in an 8-pin WL-CSP device measuring 3.09×2.28×0.33mm which reduces the surface mounting area by 77%, and the device height by 80% compared to an S0P-8 package. The WL-CSP package makes FRAM suitable for wearable and sensor…

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