Latest Electronic Memory Components News

1.2V NV memory from Adesto

Adesto Technologies launched at Electronica a non-volatile serial memory capable of operating at 1.2V…

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China start-up enables 5TB SSDs

Three year-old Sage Microelectronics of Hangzhou, China has produced an SSD controller IC that enables SSD densities of 5TB…

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NAND scaling issues becoming more complex

NAND process geometries have become as problematic as logic process geometries with the advantages of further scaling – especially as 3D NAND approaches – being questioned…

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Big data is big opportuntiy for flash memory, says IBM

Adoption of flash memory in the data centres will allow enterprises to harness the potential of big data. This was the message from IBM’s Jamie Thomas and Michael Kuhn speaking at the Flash Memory Summit taking place in Santa Clara, California this week. Analysing big data in real-time…

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TLC NAND flash gets error correction it needs to takeoff

Interest in triple-level cell (TLC) NAND flash is growing and the high density flash memory technology could have cost benefits over single-level NAND in SSDs, but only if endurance and retention questions marks are addressed. For US-based NAND flash controller supplier Silicon Motion Technology the answer is…

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