Memory

UMC licenses 55nm flash memory for wearables

United Microelectronics Corporation (UMC) has licensed embedded flash memory intellectual property (IP) from Cypress Semiconductor for the 55nm process technology node.

Cypress claims its SONOS embedded nonvolatile memory (NVM) process requires fewer additional mask layers to insert it into a standard CMOS process, specifically, three to four additional masks.

The…

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Adaptive DDR4 silicon IP runs at 2.8Gbit/s, says Uniquify

Uniquify is claiming its adaptive DDR4 silicon IP running at 2.8Gbit/s with SK Hynix’s DDR4 SDRAM memory components implemented using TSMC’s 28HPM process technology.

The adaptive DDR4 IP dynamically tracks and adjusts the critical DDR timing interface to allow the DDR4 SDRAM to be clocked at…

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Micron and Wave protect SSD drives from malware attack

Micron Technology has teamed with security specialist Wave Systems to develop technology to protect embedded computing platforms from malware attacks.

The firms say this level of security requires close integration of software and hardware, and they will develop systems to detect advanced persistent threats (APTs), the most advanced forms of…

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Spansion cuts pin-count in high speed NOR flash chips

Spansion has introduced a chip interface it claims will reduce the number of pins on large high performance system-on-chip (SoC) devices.

The first devices to be based on the HyperBus interface will be NOR flash memory with read throughput of up to 333Mbyte/s.

Take the Electronics Weekly…

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UK start-up makes 28nm FD-SOI embedded memory "breakthrough"

SureCore, the UK-based embedded memory process developer, has announced that it has taped out its low power SRAM IP demonstrator chip in STMicroelectronics’ 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) process.

The device will be used to validate the benefits of the start-up’s patented array control…

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Samsung uses 3D NAND chips in 960Gbyte drive

Samsung Electronics has introduced its first solid state drive (SSD) based on its 3D V-NAND flash memory technology.

Samsung’s V-NAND SSD comes in 960Gbyte and 480Gbyte versions.

The 960Gbyte is built from 64 dies of MLC 3D V-NAND flash with a six-gigabit-per-second SATA…

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Toshiba to build new fab for 3D flash

Toshiba, the inventor and No.2 supplier of flash, is betting on a recovery in the flash market by building an extension to its Yokkaichi Fab 5 capable of building 3D flash memory…

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