Latest Electronic Memory Components News

Monolithic terabyte memory IC

Crossbar, the RRAM specialist, says it has solved a major obstacle to RRAM’s commercialisation – what Crossbar calls ‘sneak path current’ which is akin to leakage in CMOS circuits but particularly destructive in RRAMS…

Read More

1.2V NV memory from Adesto

Adesto Technologies launched at Electronica a non-volatile serial memory capable of operating at 1.2V…

Read More

China start-up enables 5TB SSDs

Three year-old Sage Microelectronics of Hangzhou, China has produced an SSD controller IC that enables SSD densities of 5TB…

Read More

NAND scaling issues becoming more complex

NAND process geometries have become as problematic as logic process geometries with the advantages of further scaling – especially as 3D NAND approaches – being questioned…

Read More

TLC NAND flash gets error correction it needs to takeoff

Interest in triple-level cell (TLC) NAND flash is growing and the high density flash memory technology could have cost benefits over single-level NAND in SSDs, but only if endurance and retention questions marks are addressed. For US-based NAND flash controller supplier Silicon Motion Technology the answer is…

Read More

UMC licenses 55nm flash memory for wearables

United Microelectronics Corporation (UMC) has licensed embedded flash memory intellectual property (IP) from Cypress Semiconductor for the 55nm process technology node. Cypress claims its SONOS embedded nonvolatile memory (NVM) process requires fewer additional mask layers to insert it into a standard CMOS process, specifically, three to four additional masks. The…

Read More

Adaptive DDR4 silicon IP runs at 2.8Gbit/s, says Uniquify

Uniquify is claiming its adaptive DDR4 silicon IP running at 2.8Gbit/s with SK Hynix’s DDR4 SDRAM memory components implemented using TSMC’s 28HPM process technology. The adaptive DDR4 IP dynamically tracks and adjusts the critical DDR timing interface to allow the DDR4 SDRAM to be clocked at…

Read More

UK start-up makes 28nm FD-SOI embedded memory "breakthrough"

SureCore, the UK-based embedded memory process developer, has announced that it has taped out its low power SRAM IP demonstrator chip in STMicroelectronics’ 28nm Fully Depleted Silicon-on-Insulator (FD-SOI) process. The device will be used to validate the benefits of the start-up’s patented array control…

Read More