Micron has 30nm low power DRAM in production for Intel
Micron Technology has announced volume production of 30nm DDR3L-RS SDRAM with reduced power levels.
The 2Gbit and 4Gbit devices are aimed at tablet PCs and new, so-called ultrathin PCs, such as Intel’s Ultrabook device.
“The feedback from our customers about this new category of DRAM has been extremely positive,” said Robert Feurle, vice president for Micron’s DRAM marketing.
“It enables the introduction of ultrathin notebooks and tablets that are thinner, faster and run longer on a single charge,” said Feurle.
Micron’s milestone of being the first vendor with DDR3L-RS products to be validated at Intel is affirmed in a web posting on Intel’s site.
“Micron was the first DRAM supplier validated on the Ivy Bridge platform with DDR3L-RS, setting the industry standard for reduced standby PC DRAM,” said Geof Findley, Memory Enabling Senior Manager at Intel.
In addition to the 2Gbit and 4Gbit devices, Micron has begun sampling 8Gbit x 32 DDR3L-RS and is delivering samples of 8Gbit x 16 DDR3L-RS. Full production is planned for December.
In the pipeline is DDR4-RS which is not due before 2013.