Renesas has first RH850 flash microcontrollers on 40nm
Renesas Electronics has introduced its first RH850/F1x series flash microcontrollers fabricated on a 40nm process technology.
Designed for automotive applications, the RH850/F1x series uses the 40nm process and metal oxide nitride oxide silicon (MONOS) structure for flash memory with a power consumption of 0.5mA/MHz for RH850/F1L device.
An independent flash memory area is available for data storage, and it can be reprogrammed up to 125,000 times per 64-byte block.
The CPU core of G3 is capable of operating at 80MHz, delivering performance of more than 2 DMIPS/MHz.
Larger on-chip flash memory capacity from 256kbyte up to 8Mbyte is offered along with package options of 48-pin devices and up.
Also being developed is the RH850/F1M MCU. Its core is capable of operating at 120MHz, and incorporates a floating-point arithmetic unit. The available packages range from 100-pin to 208-pin, and the flash memory capacity is selectable over a range from 1.5Mbyte to 4Mbyte.
The RH850/F1M is suitable for use in body control modules that require a large number of I/O pins.
Dual-core versions are also planned to be available in the RH850/F1H Group.
These will offer Ethernet functionality as well as controller area network (CAN), LIN, and FlexRay.
Development tools provided by Renesas for the RH850/F1x Series include the Renesas eclipse embedded studio, e2studio and the E1 on-chip debugging emulator, and flash memory programmers. There are also plans to provide support for software conforming to the Automotive Open System Architecture (AUTOSAR) standard.
Samples of the RH850/F1L Group of MCUs are scheduled to be available from 2Q CY2013.