GaN shrinks 10GHz transceiver by 90% at Fujitsu
Fujitsu Labs has developed single-chip 10GHz GaN HEMT transceiver with an output of 6.3W, claiming it to be a world first.
“In order to simultaneously handle strong transmission signals and weak incoming signals in the same chip, it is necessary to efficiently switch between outgoing and incoming signals, while reducing the impact that outgoing signals have on incoming signals,” said the firm. “Until now, it has been technologically difficult to accomplish these objectives in tandem.”
To achieved isolation, the lab developed a GaN HEMT duplexer that measures 1.8×2.4mm, for which it is claiming 1.1dB transmission loss across 0-12GHz.
“This is dramatically smaller and lighter than earlier switches using magnetic materials,” said Fujitsu.
Within the chip, grounded via holes for are arrayed around the transistors for shielding – see diagram.
“In addition, the locations and layouts of signal wiring and circuitry were optimised using three-dimensional analysis of electromagnetic radiation to suppress unwanted signal interference. This ensures stable operation, preventing oscillations of the high-power circuitry,” said the Lab.
“The result is a transceiver chip that measures only 3.6×3.3mm, representing a footprint that is less than 10% of the size of the multiple chips that have been needed until now,” claimed Fujitsu.
Details were presented at the IEEE MTT International Microwave Symposium in Montreal this week.
Fujitsu plans to use the chip in modules for wireless comms and radar.