Renesas cuts saturation voltage in IGBTs
Renesas has shaved 200mV from the saturation voltage of its 650V IGBTs to increase power efficiency.
Said to be due to “ultrathin wafer technology”, typical saturation voltage has dropped from 1.8V to 1.6V in 650V devices, and from 2.1V to 1.8V in 1,250V versions.
“There is a trade-off between saturation voltage and the high short circuit tolerance,” said the firm. “It has been difficult to achieve low loss along with a high short circuit tolerance.”
However, it seems to have done it, with short circuit tolerance up to 10µs, compared with 8µs in its comparable earlier products. “This ensures reliability and robust performance in systems such as power conditioners for solar power inverters,” said Renesas.
For faster switching, reverse transfer capacitance is approximately 10% down “by optimising the surface structure of the device”.
The 13 IGBTs can be found in the RJH/RJP65S series for 650V and RJP1CS series for 1,250V.
Shipping formats are wafer/chip and TO-247A package for the RJH65S series.
Samples start shipping this month, with mass production scheduled to begin in September 2012, scaling to 500,000 units/month by April next year.
Renesas also plans to release a line of kits consisting of the new IGBTs with RL78 and RX families of microcontrollers for motor and inverter control.