Samsung selects RF Micro Devices PA for 4G Galaxy
RF Micro Devices, says it has begun production shipments of power amplifiers to Samsung for use in the next-generation Galaxy S3 4G LTE smartphone.
This 4G LTE smartphone features a dual core multi-mode 3G/LTE modem. ??
RFMD said it expects to supply the majority of the 3G and 4G power amplifiers in Samsung’s highest volume smartphones this calendar year.
“We currently forecast robust growth in LTE in calendar 2012, as LTE devices grow from approximately 20 million units in calendar 2011 to greater than 100 million units in calendar 2012,” said Eric Creviston, president of RFMD’s cellular products group.
RFMD’s 3G and 4G LTE PAs cover WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 3, 4, 7, 11, 13, 17, 20, and 21 — addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.
“These shipments of RFMD’s ultra-high efficiency 3G/4G power amplifiers to Samsung underscore our strong design momentum in next-generation mobile devices and our early market share leadership in the rapidly growing LTE market,” said Creviston.
It supplies single-mode/single-band components to complete multimode/multi-band front end reference designs.